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| LED - Chip Preliminary Radiation Green Type Standard 10.04.2007 Technology InGaN/Al2O3 EL-490-37 rev. 01/07 Electrodes Both on top side typ. dimensions in m (20 m) 380 m O 90m 100 m P typ. thickness 90 (20) m front side metalization Au-alloy, 0.5 m backside metalization Al-alloy, 1.5 m 350 m 380 m N 350 m Maximum Ratings Tamb = 25C, unless otherwise specified Parameter Forward current (DC) Peak forward current Operating temperature range Storage temperature range (tP 50 s, tP /T = 1/2) Test conditions Symbol IF IFM Tamb Tstg Value 20 100 -40 to +85 -40 to +100 Unit mA mA C C Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Luminous intensity1 Dominant wavelength Spectral bandwidth at 50% Switching time 1 O100 Symbol VF VR v D 0.5 tr , t f Min Typ 3.3 Max 3.5 Unit V V IF = 20 mA IF = 1 A IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA 5 220 480 280 490 25 20 500 mcd nm nm ns Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type EL-490-37 Lot N v(typ) [mcd] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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